Navitas Advances GaN MOSFET and Silicon Carbide Power Semiconductor Technology with 5th Generation Platform

The semiconductor industry is witnessing a critical shift in power conversion technology, and Navitas Semiconductor (Nasdaq: NVTS) is leading this transformation with its latest innovation. On February 12, 2026, the company announced its 5th generation GeneSiC™ technology platform, representing a significant leap in GaN MOSFET and silicon carbide (SiC) power semiconductor performance. This breakthrough platform introduces the industry’s most advanced Trench-Assisted Planar (TAP) architecture, specifically engineered for the demanding requirements of AI data centers, grid infrastructure, and industrial electrification applications.

The Evolution of GaN MOSFET Technology: What’s New in 5th Generation Design

Navitas’ latest advancement centers on a fundamentally reimagined TAP architecture that combines the robustness of planar gate technology with the performance advantages of trench-based structures in the source region. This hybrid approach positions the 5th generation platform as a new benchmark for power conversion efficiency and reliability.

The engineering breakthrough is quantified through impressive performance metrics. The 5th generation SiC MOSFET technology achieves a 35% improvement in the RDS,ON × QGD figure of merit compared to the previous 1200V generation. This enhancement directly translates to reduced switching losses, enabling power stages to operate at cooler temperatures and higher frequencies—a critical advantage in high-density power systems. Additionally, the platform demonstrates approximately 25% improvement in the QGD/QGS ratio, which accelerates switching response times and strengthens noise immunity in complex electromagnetic environments.

Gate Drive Stability and Noise Resilience in Modern Power Systems

One of the most critical aspects of MOSFET reliability is gate drive stability, particularly in high-noise industrial and data center environments. The 5th generation platform addresses this challenge through a specification of VGS,TH ≥ 3V, ensuring robust immunity against parasitic turn-on events. This elevated threshold voltage specification guarantees predictable gate behavior even when subjected to transient electromagnetic disturbances—a common occurrence in AI infrastructure and renewable energy applications.

The GaN MOSFET architecture is further enhanced by Navitas’ patented “Soft Body-Diode” technology, which optimizes the RDS(ON) × EOSS characteristic and minimizes electromagnetic interference (EMI) during high-speed switching cycles. This refinement ensures smoother commutation transitions and improved system stability across multiple switching scenarios.

Reliability Engineering: Meeting Industry Standards for Mission-Critical Infrastructure

Navitas recognized that performance improvements alone are insufficient for grid and data center applications, which demand exceptional long-term stability. The 5th generation platform received AEC-Plus grade qualification, a designation exceeding standard automotive electronics (AEC-Q101) and JEDEC reliability requirements.

The comprehensive reliability testing protocol includes:

• Extended static testing: High-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and reverse gate bias (HTGB-R) stress testing extended 3x beyond standard durations
• Dynamic switching validation: Dynamic reverse bias (DRB) and dynamic gate switching (DGS) protocols that simulate real-world fast-switching mission profiles
• Threshold stability: Exceptional VGS,TH stability under extended switching stress, ensuring consistent long-term efficiency and predictable device behavior
• Gate oxide integrity: Extrapolated gate-oxide failure times exceeding 1 million years at operating conditions (18V at 175°C), providing margin for mission-critical deployments
• Cosmic ray resilience: Exceptionally low failure rates (FIT metrics), a crucial specification for high-altitude and continuous-uptime environments like data centers

Market Applications: From AI Infrastructure to Grid Modernization

The 5th generation GeneSiC platform extends Navitas’ existing high-voltage SiC device lineup, which includes 2300V and 3300V options from the 4th generation platform. This tiered portfolio addresses diverse power conversion challenges across multiple market segments.

AI data centers face unprecedented power conversion demands as computational workloads intensify. The 5th generation SiC MOSFET technology enables more efficient power delivery architectures with reduced thermal management costs. Grid modernization and renewable energy integration similarly benefit from improved efficiency and reliability, as power conversion systems must operate continuously under variable load conditions. Industrial electrification applications—from electric vehicle charging infrastructure to industrial motor drives—rely on the robustness and efficiency that this generation of GaN MOSFET and SiC devices delivers.

Strategic Positioning in the Semiconductor Landscape

Paul Wheeler, VP & GM of Navitas’ SiC Business Unit, emphasized the company’s commitment: “Our customers are redefining the boundaries of power conversion in AI data centers and energy infrastructure, and Navitas is advancing alongside them at every stage.”

This 5th generation release reflects Navitas’ broader strategy in wide-bandgap semiconductor technology. The company combines its proven GaNFast™ GaN power ICs with cutting-edge GeneSiC™ SiC devices, creating a comprehensive power solution portfolio. With over 300 patents issued or pending and CarbonNeutral® certification, Navitas has established itself as a technology leader committed to both innovation and sustainability.

The company has indicated that additional products utilizing this 5th generation technology platform will be announced in coming months, suggesting a broader product line expansion aligned with evolving customer requirements in AI and energy sectors.