Samsung and NVIDIA accelerate the development of next-generation NAND flash memory

According to a report by South Korea’s Seoul Economic Daily, citing unnamed industry insiders, Samsung Electronics is working with NVIDIA to accelerate the R&D of next-generation NAND flash memory chips. A joint research team from the Samsung Semiconductor Research Institute, NVIDIA, and Georgia Tech developed a “physical information neural network operator” model. The model analyzes the performance of ferroelectric-based NAND flash memory devices at a speed more than 10,000 times faster than existing models, and the research results have been published. Based on the research findings, Samsung is working with NVIDIA to develop and commercialize ferroelectric NAND. (China Finance Network)